Octubre 18, 2024
10:00
Date
Octubre 18, 2024
10:00
Location
Salón de actos, Parc Científic UV
Snezana Lazic
Assistant Professor at the Department of Physics of Materials, Universidad Autónoma de Madrid
Read bio
Prof. Dr. Snežana Lazić Knežević is a Senior Researcher and Assistant Professor at the Department of Physics of Materials, University Autónoma in Madrid (Spain). Her professional experience in science and engineering extends over several interdisciplinary research areas, including semiconductor nanotechnology, optical spectroscopy, acoustics in semiconductors, quantum optics, condensed matter physics, photonics and optoelectronics. Her ongoing research activities aim at design, processing and optical characterization of semiconductor heterostructures for nanophotonics and novel quantum information technologies
Future on-chip quantum photonics requires controllable quantum emitters that can be operated on-demand and with the possibility of in situ control of the photon emission wavelength and its polarization state. Here, we report the first proof-of-principle demonstration of the dynamic real-time control, using radio frequency surface acoustic waves (SAWs), of the optical emission from quantum dots (QDs) embedded in epitaxially grown core-shell GaN/InGaN nanowire (NW) heterostructures. Luminescent QD-like exciton localization centers, induced by indium content fluctuations within the InGaN nanoshell, are identified using spatially, polarization- and time-resolved stroboscopic micro-photoluminescence (μ-PL) spectroscopy. They exhibit narrow and highly linearly polarized emission lines in the μ-PL spectra and a pronounced antibunching signature of single-photon emission in the photon correlation experiments. Depending on their location within the InGaN nanoshell, nonpolar (m-), semipolar (r-) or polar (c-facet) QDs are discerned, thereby making these NWs the first experimentally demonstrated single nanostructures able to host non-classical light emitters with both high- and low-polarity crystallographic orientations [1]. Owing to their short radiative lifetimes resulting from weak built-in electric field values along the growth axis, the III-nitride QDs grown on alternative low-polarity crystallographic planes are greatly beneficial for future high-speed quantum information technologies. When such NWs are perturbed by the propagating SAW, the embedded QDs are periodically strained and their excitonic transitions are dynamically modulated by the acousto-mechanical coupling, giving rise to a spectral fine-tuning within ~2 meV bandwidth at the acoustic frequency of ~330 MHz. This outcome is further combined with spectral detection filtering for temporal control of the emitted photons. In this way, both spectral tunability and on-demand emission of single photons is achieved simultaneously [2,3]. Moreover, the SAW-triggered acousto-electric effect inflicts changes in the QD charge population and (up to 30%) its optical polarization. This is an important advance since, to date, the photon polarization state of III-nitride QDs has been either probabilistic or pre-determined by the electronic properties of the system.
In addition, by deliberately engineer different periodic waveforms of the driving RF signal, the resulting SAW mediated fine-spectral tuning of our NW QD emission response we are able to achieve more complex temporal sequence of the emitted photons. In this way, we can use the photon emission or arrival time as a degree of freedom to encode a qubit of information on a photon. This offers various advantages over other encoding schemes, including resilience against decoherence which makes this time-bin encoding better suited for fiber optics applications compared to e.g. polarization encoding.
Altogether, this study opens the door to the use of sound for scalable integration of III-nitride-based quantum emitters in nanophotonic and quantum information technologies. The advantage of the acousto-optoelectric over other control schemes is that it allows in-situ manipulation of the optical emission properties over a wide frequency range (up to GHz frequencies).
References
[1] Ž. Gačević et al., ACS Photon. 4, 657 (2017).
[2] S. Lazić et al., Semicond. Sci. Technol. 32, 084002 (2017).
[3] S. Lazić et al., J. Phys. D: Appl. Phys. 51, 104001 (2018).
Octubre 18, 2024
10:00
Salón de actos, Parc Científic UV
Snezana Lazic
Assistant Professor at the Department of Physics of Materials, Universidad Autónoma de Madrid
Complete the information to register for the event