Marzo 28, 2025

15:00

Towards next-generation photonic integrated devices using phase-change materials and transparent conductive oxides

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Date

Marzo 28, 2025

15:00

 

Location

Sala SS6 seminarios, semisótano. Parc Científic UV.

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The exponential growth of photonic integrated circuits (PICs) has been driven by their scalability and ability to harness light’s benefits. Among various platforms, silicon (Si) photonics stands out due to its compatibility with complementary metal-oxide-semiconductor (CMOS) fabrication and electronic integration, meeting the demands of applications such as data communications, artificial intelligence, quantum computing, and healthcare. However, the modest active properties of silicon challenge its adaptability to emerging needs. To overcome this, we have explored integrating CMOS-compatible materials—phase-change materials (PCMs) and transparent conductive oxides (TCOs)—with Si photonics. In this talk, I will present recent hybrid PCM/Si and TCO/Si photonic devices offering new functionalities such as reconfigurability, optical storage, strong nonlinearities, and neuromimetic optical response, expanding the horizons of Si photonics technology.

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Marzo 28, 2025

15:00

Towards next-generation photonic integrated devices using phase-change materials and transparent conductive oxides

Sala SS6 seminarios, semisótano. Parc Científic UV.

Dr. Jorge Parra

Silicon Photonics Research Scientist - Postgraduate Teaching Associate, Nanophotonics Technology Center. Universitat Politècnica de València

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